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Award Detail

Doing Business As Name:University of Arkansas
  • Homer A Mantooth
  • (479) 575-4838
  • Juan Carlos Balda
  • Roy McCann
  • Simon S Ang
Award Date:07/27/2009
Estimated Total Award Amount: $ 565,000
Funds Obligated to Date: $ 565,000
  • FY 2009=$565,000
Start Date:09/01/2009
End Date:08/31/2014
Transaction Type:Grant
Awarding Agency Code:4900
Funding Agency Code:4900
CFDA Number:47.041
Primary Program Source:040101 RRA RECOVERY ACT
Award Title or Description:Collaborative Research: I/UCRC on Grid-Connected Advanced Power Electronic Systems (GRAPES)
Federal Award ID Number:0934390
DUNS ID:191429745
Parent DUNS ID:055600001
Program:IUCRC-Indust-Univ Coop Res Ctr

Awardee Location

Street:1125 W. Maple Street
Awardee Cong. District:03

Primary Place of Performance

Organization Name:University of Arkansas
Street:1125 W. Maple Street
Cong. District:03

Abstract at Time of Award

Center for Grid-Connected Advanced Power Electronic Systems (GRAPES) IIP-0934390 University of Arkansas Mantooth IIP-0934378 University of South Carolina (USC) Dougal This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). The purpose of this proposal is to start a new I/UCRC "Grid-Connected Advanced Power Electronic Systems (GRAPES)" with a focus on developing the new knowledge, tools, hardware, software, and personnel that are required to pervasively insert power electronics into the 21st century power grid in ways that will strengthen and modernize the grid. The lead of the proposed Center will be the University of Arkansas (UK) with the University of South Carolina (USC) as a research partner. New software will be developed to enable grid connected power electronics to benefit the grid as well as controlled loads. This will include new novel medium voltage multiport power converter system to efficiently and reliably integrate energy storage systems (ESS), and renewable distributed energy resources (DER), into the utility grid. The new IUCRC will target three industries: 1) utilities and other end users, 2) equipment manufacturers, and 3) component suppliers. This proposed center has the potential to improve sustainablility and profitability of US manufacturing by developing new technologies that will reduce energy consumption and pollution. The proposed I/UCRC plans to develop leading-edge industry relevant research, and to make full use of an already-developed national-caliber facility for design, development, test, evaluation, and standardization of distribution-level grid-connected power electronic equipment. Students and faculty members will gain valuable experience by interaction with industry partners. The PIs adequately describe their plan for including under represented groups in all areas of the research program. The Center will train students and practicing engineers and establish new courses that will integrate research with education. This center has the potential to make the US a leader in power electronic systems for grids especially for developing countries.

Publications Produced as a Result of this Research

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A. Escobar-Mejia, C. Stewart, J.K. Hayes, S.S. Ang, J.C. Balda, and S. Talakokkula "Realization of a Modular Indirect Matrix Converter System Using Normally Off SiC JFETs" IEEE Transactions on Power Electronics, v.29, 2014, p.2574.

E. Platania, Z. Chen, F. Chimento, A. Raciti, A. Grekov, R. Fu, L. Lu, A. Raciti, J. L. Hudgins, H. A. Mantooth, D. Sheridan, J. Casady, and E. Santi "A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility" IEEE Trans. On Industry Applications, v.47, 2011, p.199.

M. Mudholkar, H.A. Mantooth, G. Niu and J. D. Cressler "Direct parameter extraction of base and emitter resistances for SiGe HBTs using DC data only" Electro-Chemical Society Transactions, v.33, 2010, p.337.

A. S. Kashyap, H. A. Mantooth, T. Vo, M. M. Mojarradi "Compact modeling of LDMOS transistors for extreme environment analog circuit design" IEEE Trans. Electron Devices, v.57, 2010, p.1431.

Z. Xu, G. Niu, L. Luo, J. D. Cressler, M. L. Alles, R. Reed, H. A. Mantooth, J. Holmes, P. W. Marshall "Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures" IEEE Trans. Nuclear Science, v.57, 2010, p.3206.

S. S. Ang, T. Evans, J. Zhou, K. Schirmer, H. Zhang, B. Rowden, J. C. Balda, and H. A. Mantooth "Packaging issues for high-voltage power electronic modules" Electro-Chemical Society Transactions, v., 2011, p.893.

Valle-Mayorga, J; Gutshall, K; Phan, I; Escocia-Carranza, I; Mantooth, HA; Reese, B; Schupbach, R; Lostetter, A "High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules" IEEE Transactions on Power Electronics, v.27, 2012, p.4417.

J. Valle-Mayorga, C. Gutshall, K. Phan, I.Escorcia-Carranza, A. Mantooth, B. Reese, R. Schupbach, A. Lostetter "High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules" IEEE Transactions on Power Electronics, v., 2012, p.4417.

Grekov, A; Chen, Z; Fu, R; Hudgins, JL; Mantooth, HA; Sheridan, DC; Casady, J; Santi, E "Parameter Extraction Procedure for Vertical SiC Power JFET" IEEE Transactions on Industry Applications, v.47, 2011, p.1862.

Publications Produced as Conference Proceedings

Luo, L;Xu, ZY;Niu, GF;Chakraborty, PS;Cheng, P;Thomas, D;Moen, K;Cressler, JD;Mudholkar, M;Mantooth, HA "Wide Temperature Range Compact Modeling of SiGe HBTs for Space Applications" SSST 2011 - 43rd IEEE Southeastern Symposium on System Theory, v. , 2011, p.110 View record at Web of Science

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