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Research Spending & Results

Award Detail

Awardee:GEORGIA TECH RESEARCH CORPORATION
Doing Business As Name:Georgia Tech Research Corporation
PD/PI:
  • Dennis W Hess
  • (404) 894-5922
  • dennis.hess@chbe.gatech.edu
Co-PD(s)/co-PI(s):
  • Walter De Heer
Award Date:09/04/2008
Estimated Total Award Amount: $ 6,750,000
Funds Obligated to Date: $ 9,211,293
  • FY 2008=$1,350,000
  • FY 2009=$1,516,158
  • FY 2011=$1,555,016
  • FY 2014=$675,000
  • FY 2010=$1,415,119
  • FY 2012=$2,700,000
Start Date:09/01/2008
End Date:08/31/2015
Transaction Type: Cooperative Agreements
Agency:NSF
Awarding Agency Code:4900
Funding Agency Code:4900
CFDA Number:47.049
Primary Program Source:040100 NSF RESEARCH & RELATED ACTIVIT
Award Title or Description:MRSEC: The Georgia Tech Laboratory for New Electronic Materials
Federal Award ID Number:0820382
DUNS ID:097394084
Parent DUNS ID:097394084
Program:MATERIALS RSCH SCI & ENG CENT
Program Officer:
  • Daniele Finotello
  • (703) 292-4676
  • dfinotel@nsf.gov

Awardee Location

Street:Office of Sponsored Programs
City:Atlanta
State:GA
ZIP:30332-0420
County:Atlanta
Country:US
Awardee Cong. District:05

Primary Place of Performance

Organization Name:Georgia Institute of Technology
Street:225 NORTH AVE NW
City:Atlanta
State:GA
ZIP:30332-0002
County:Atlanta
Country:US
Cong. District:05

Abstract at Time of Award

The Materials Research Science and Engineering Center (MRSEC) at the Georgia Institute of Technology addresses the need for new electronic materials and associated processes for applications in microelectronics, optics and sensors. Materials growth methods, electrical, chemical and physical characterization, pattern generation, device fabrication, and theory/modeling are invoked to ensure holistic and interdisciplinary approaches to the development and investigation of novel materials and devices. The single Interdisciplinary Research Group on Graphene Science and Technology investigates fabrication and characterization approaches for the implementation of epitaxial graphene as an electronic material. The MRSEC has extensive collaborations with corporations, national laboratories and universities world-wide. Broad educational activities and outreach programs that integrate materials research into K-12, university and professional education are supported and fostered. Shared experimental facilities at Georgia Tech and partner institutions ensure the ability to fabricate and characterize materials for use in a variety of applications.

Publications Produced as a Result of this Research

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Hicks, J; Arora, R; Kenyon, E; Chakraborty, PS; Tinkey, H; Hankinson, J; Berger, C; de Heer, WA; Conrad, EH; Cressler, JD "X-ray radiation effects in multilayer epitaxial graphene" APPLIED PHYSICS LETTERS, v.99, 2011, p.. doi:10.1063/1.366595  View record at Web of Science

Rubio-Roy, M.; Zaman, F.; Hu, Y.; Berger, C.; Moseley, M.; Meindl, J.; de Heer, W. "Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap" Applied Physics Letters, v.96:8, 2010, p.082112.

Wang, F.; Shepperd, K.; Hicks, J.; Nevius, M. S.; Tinkey, H.; Tejeda, A.; Taleb-Ibrahimi, A.; Bertran, F.; Le Fevre, P.; Torrance, D. B.; First, P. N.; de Heer, W. A.; Zakharov, A. A.; Conrad, E. H. "Silicon intercalation into the graphene-SiC interface" PHYSICAL REVIEW B, v.85, 2012, p.115-120.

Xian, Lede; Chou, M. Y. "Diffusion of Si and C atoms on and between graphene layers" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.115-120.

Sojoudi, Hossein; Baltazar, Jose; Henderson, Clifford; Graham, Samuel "Impact of post-growth thermal annealing and environmental exposure on the unintentional doping of CVD graphene films" JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, 2012, p.115-120.

Hu, YK; Ruan, M; Guo, ZL; Dong, R; Palmer, J; Hankinson, J; Berger, C; de Heer, WA "Structured epitaxial graphene: growth and properties" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.. doi:10.1088/0022-3727/45/15/15401  View record at Web of Science

Hupalo, M.; Conrad, E.; and Tringides, M. "Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces: A scanning tunneling microscopy study" Physical Review B, v.80:4, 2009, p.041401.

Hudgins, M; Khizroev, S "Considerations for the Implementation of 2D Protein Based Memory" JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, 2011, p.2520. doi:10.1166/jnn.2011.392  View record at Web of Science

Song, YJ; Otte, AF; Kuk, Y; Hu, YK; Torrance, DB; First, PN; de Heer, WA; Min, HK; Adam, S; Stiles, MD; MacDonald, AH; Stroscio, JA "High-resolution tunnelling spectroscopy of a graphene quartet" NATURE, v.467, 2010, p.185. doi:10.1038/nature0933  View record at Web of Science

de Heer, WA "Epitaxial graphene: A new electronic material for the 21st century" MRS BULLETIN, v.36, 2011, p.632. doi:10.1557/mrs.2011.15  View record at Web of Science

Chiu, Hsiang-Chih; Dogan, Sedat; Volkmann, Mirjam; Klinke, Christian; Riedo, Elisa "Adhesion and size dependent friction anisotropy in boron nitride nanotubes" NANOTECHNOLOGY, v.23, 2012, p.115-120.

Williams, M.D.; Hess, D.W. "Effect of Growth Morphology on the Electronic Structure of Epitaxial Graphene on SiC" Graphene, v.2, 2013, p.55 -59.

Park, CW; South, AB; Hu, XB; Verdes, C; Kim, JD; Lyon, LA "Gold nanoparticles reinforce self-healing microgel multilayers" COLLOID AND POLYMER SCIENCE, v.289, 2011, p.583. doi:10.1007/s00396-010-2353-  View record at Web of Science

Sojoudi, Hossein; Baltazar, Jose; Tolbert, Laren M.; Henderson, Clifford L.; Graham, Samuel "Creating Graphene p-n Junctions Using Self-Assembled Monolayers" ACS APPLIED MATERIALS & INTERFACES, v.4, 2012, p.4781-4786.

First, PN; de Heer, WA; Seyller, T; Berger, C; Stroscio, JA; Moon, JS "Epitaxial Graphenes on Silicon Carbide" MRS BULLETIN, v.35, 2010, p.296. View record at Web of Science

Hong, JM; Niyogi, S; Bekyarova, E; Itkis, ME; Ramesh, P; Amos, N; Litvinov, D; Berger, C; de Heer, WA; Khizroev, S; Haddon, RC "Effect of Nitrophenyl Functionalization on the Magnetic Properties of Epitaxial Graphene" SMALL, v.7, 2011, p.1175. doi:10.1002/smll.20100224  View record at Web of Science

Niyogi, S.; Bekyarova, E.; Itkis, M.; Zhang, H.; Shepperd, K.; Hicks, J.; Sprinkle, M.; Berger, C.; Lau, C.; Deheer, W.; Conrad, E.; Haddon, R "Spectroscopy of Covalently Functionalized Graphene" Nano Letters, v.10:10, 2010, p.4061.

Bekyarova, E.; Sarkar, S.; Niyogi, S.; Itkis, M. E.; Haddon, R. C. "Advances in the chemical modification of epitaxial graphene" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.115-120.

Yan, J.; Ruan, W.; Chou,M. "Electron-Phonon Interactions for Optical Phonon Modes in Few-Layer Graphene" Physics Review B, v.79, 2009, p.115443.

Sprinkle, M.; Siegel, D.; Hu, Y.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Vizzini, S.; Enriquez, H.; Chiang, S.; Soukiassian, P.; Berger, C.; de Heer, W.; Lanzara, A.; Conrad, E. "First Direct Observation of a Nearly Ideal Graphene Band Structure RID B-7515-2008" Physical Review Letters, v.103:22, 2009, p.226803.

Itkis, ME; Wang, FH; Ramesh, P; Bekyarova, E; Niyogi, S; Chi, XL; Berger, C; de Heer, WA; Haddon, RC "Enhanced photosensitivity of electro-oxidized epitaxial graphene" APPLIED PHYSICS LETTERS, v.98, 2011, p.. doi:10.1063/1.356231  View record at Web of Science

Bekyarova, Elena; Sarkar, Santanu; Wang, Feihu; Itkis, Mikhail E.; Kalinina, Irina; Tian, Xiaojuan; Haddon, Robert C. "Effect of Covalent Chemistry on the Electronic Structure and Properties of Carbon Nanotubes and Graphene" ACCOUNTS OF CHEMICAL RESEARCH, v.46, 2013, p.65-76.

Xian, L; Barraza-Lopez, S; Chou, MY "Effects of electrostatic fields and charge doping on the linear bands in twisted graphene bilayers" PHYSICAL REVIEW B, v.84, 2011, p.. doi:10.1103/PhysRevB.84.07542  View record at Web of Science

Sarkar, S; Niyogi, S; Bekyarova, E; Haddon, RC "Organometallic chemistry of extended periodic pi-electron systems: hexahapto-chromium complexes of graphene and single-walled carbon nanotubes" CHEMICAL SCIENCE, v.2, 2011, p.1326. doi:10.1039/c0sc00634  View record at Web of Science

de Heer, WA "Nanotubes and the pursuit of applications" MRS BULLETIN, v.29, 2004, p.281. View record at Web of Science

Sharma, N.; Oh, D.; Abernathy, H.; Liu, M.; First, P.; Orlando, T. "Signatures of epitaxial graphene grown on Si-terminated 6H-SiC (0001)" Surface Science, v.604:2, 2010, p.84.

de Heer, Walter "The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide" Physica Scripta: Proceedings of the Nobel Prize Symposium on Graphene, v.T146, 2012, p.014004. doi:10.1088/0031-8949/2012/T146/014004 

Barraza-Lopez, S; Vanevic, M; Kindermann, M; Chou, MY "Effects of Metallic Contacts on Electron Transport through Graphene" PHYSICAL REVIEW LETTERS, v.104, 2010, p.. doi:10.1103/PhysRevLett.104.07680  View record at Web of Science

Zhou, Y.; Fuentes-Hernandez, C.; Shim, J.; Meyer, J.; Giordano, A.; Li, H.; Winget, P.; Papadopoulos, T; Cheun, H.; Kim, J.; Fenoll, M.; Dindar, A.; Haske, W.; Najafabadi, E.; Khan, T.; Sojoudi, H.; Barlow, S.; Graham, S.; Marder, S.; Kippelen, B. "A Universal Method To Produce Low Work Function Electrodes For Organic Electronics" Science, v.336, 2012, p.327-332.

Orlita, M; Faugeras, C; Grill, R; Wysmolek, A; Strupinski, W; Berger, C; de Heer, WA; Martinez, G; Potemski, M "Carrier Scattering from Dynamical Magnetoconductivity in Quasineutral Epitaxial Graphene" PHYSICAL REVIEW LETTERS, v.107, 2011, p.. doi:10.1103/PhysRevLett.107.21660  View record at Web of Science

Hong, J.; Niyogi, S.; Bekyarova, E.; Itkis, M.; Ramesh, P.; Berger, C.; deHeer, W.; Haddon, R. "Effect of functionalization on the electrostatic charging, tunneling, and Raman spectroscopy of epitaxial graphene" Journal of Vacuum Science & Technology B, v.30, 2012, p.. doi:10.1116/1.3693417 

Sokolov, D.; Shepperd, K.; Orlando, T. "Formation of Graphene Features from Direct Laser-Induced Reduction of Graphite Oxide" Journal of Physical Chemistry Letters, v.1:18, 2010, p.2633.

Kim, S.; Zhou, S.; Hu, Y.; Acik, M.; Chabal, Y.; Berger, C.; de Heer, W.; Bongiorno, A.; Riedo, E. "Room-temperature metastability of multilayer graphene oxide films" Nature Materials, v.11, 2012, p.544. doi:10.1038/nmat3316 

Sun, D. "Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation" Phys. Rev. B, v.85, 2012, p.115-120.

Sarkar, Santanu; Bekyarova, Elena; Haddon, Robert C. "Reversible Grafting of a-Naphthylmethyl Radicals to Epitaxial Graphene" ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.51, 2012, p.4901-4904.

Sarkar, S; Bekyarova, E; Niyogi, S; Haddon, RC "Diels-Alder Chemistry of Graphite and Graphene: Graphene as Diene and Dienophile" JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.133, 2011, p.3324. doi:10.1021/ja200118  View record at Web of Science

Bekyarova, E; Sarkar, S; Niyogi, S; Itkis, ME; Haddon, RC "Advances in the chemical modification of epitaxial graphene" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.. doi:10.1088/0022-3727/45/15/15400  View record at Web of Science

Kindermann, M; First, PN "Effective theory of rotationally faulted multilayer graphene-the local limit" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.. doi:10.1088/0022-3727/45/15/15400  View record at Web of Science

Barrett, N.; Conrad, E.; Winkler, K.; Kroemker, B. "Dark field photoelectron emission microscopy of micron scale few layer graphene" REVIEW OF SCIENTIFIC INSTRUMENTS, v.83, 2012, p.115-120.

Siegel, D.; Zhou, S.; El Gabaly, F.; Schmid, A.; McCarty, K.; Lanzara A. "Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate" Physical Review B, v.80:24, 2009, p.241407.

Sun, D.; Divin, C.; Berger, C.; de Heer, W.; First, P.; Norris, T. "Hot carrier cooling by acoustic phonons in epitaxial graphene by ultrafast pump-probe spectroscopy" Physica Status Solidi C, v.8, 2011, p.1194. doi:10.1002/pssc.201001134 

Bekyarova,E.; Itkis,M.; Ramesh,P.; Haddon,R. "Chemical approach to the realization of electronic devices in epitaxial graphene" Physica Status Solidi-rapid Resesarch Letters, v.3:6, 2009, p.184.

Lyon, L.; Fernandez-Nieves, A. "The Polymer/Colloid Duality of Microgel Suspensions" Annual Review of Physical Chemistry, v.63, 2012, p.25. doi:10.1146/annurev-physchem-032511-143735 

Denis A. Sokolov, Christopher M. Rouleau, David B. Goehegan, and Thomas M. Orlando ""Excimer laser reduction and patterning of graphite oxide"" Carbon, v.53, 2013, p.81-89.

Ming, F; Zangwill, A "Model and simulations of the epitaxial growth of graphene on non-planar 6H-SiC surfaces" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.. doi:10.1088/0022-3727/45/15/15400  View record at Web of Science

Baltazar, J.M.; Sojoudi, H.M.; Paniagua, S.A.; Kowalik, J.M.; Marder, S.R.; Tolbert, L.M.; Graham, S.M.; Henderson, C.L. "Facile Formation of Graphene P-N Junctions Using Self-Assembled Monolayers" J. Phys. Chem. C, v.116, 2012, p.19095-103.

Sidorov, AN; Sherehiy, A; Jayasinghe, R; Stallard, R; Benjamin, DK; Yu, QK; Liu, ZH; Wu, W; Cao, HL; Chen, YP; Jiang, ZG; Sumanasekera, GU "Thermoelectric power of graphene as surface charge doping indicator" APPLIED PHYSICS LETTERS, v.99, 2011, p.. doi:10.1063/1.360985  View record at Web of Science

Kim, S; Bastani, Y; Lu, HD; King, WP; Marder, S; Sandhage, KH; Gruverman, A; Riedo, E; Bassiri-Gharb, N "Direct Fabrication of Arbitrary-Shaped Ferroelectric Nanostructures on Plastic, Glass, and Silicon Substrates" ADVANCED MATERIALS, v.23, 2011, p.3786. doi:10.1002/adma.20110199  View record at Web of Science

Borovikov,V.; Zangwill,A. "Step-edge instability during epitaxial growth of graphene from SiC(0001)" Physical Review B, v.80:12, 2009, p.121406.

Bekyarova,E.; Itkis,M.; Ramesh,P.; Berger,C.; Sprinkle,M.; de Heer,W.; Haddon,R. "Chemical Modification of Epitaxial Graphene: Spontaneous Grafting of Aryl Groups" Journal of the American Chemical Society, v.131:4, 2009, p.1336.

Ruan, Ming; Hu, Yike; Guo, Zelei; Dong, Rui; Palmer, James; Hankinson, John; Berger, Claire; de Heer, Walt A. "Epitaxial graphene on silicon carbide: Introduction to structured graphene" MRS BULLETIN, v.37, 2012, p.1138-1147.

Sherpa, S.; Paniagua, S.; Levitin, G.; Marder, S.; Williams, M.; Hess, D. "Photoelectron Spectroscopy Studies of Plasma-Fluorinated Epitaxial Graphene" Journal of Vacuum Science and Technology B, v.30, 2012, p.. doi:10.1116/1.3688760 

Tejeda, A.; Taleb-Ibrahimi, A.; de Heer, W.; Berger, C.; Conrad, E. H. "Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure" NEW JOURNAL OF PHYSICS, v.14, 2012, p.115-120.

de Heer, WA; Berger, C; Ruan, M; Sprinkle, M; Li, XB; Hu, YK; Zhang, BQ; Hankinson, J; Conrad, E "Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide" PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.108, 2011, p.16900. doi:10.1073/pnas.110511310  View record at Web of Science

Lucas, Marcel; Riedo, Elisa "Invited Review Article: Combining scanning probe microscopy with optical spectroscopy for applications in biology and materials science" REVIEW OF SCIENTIFIC INSTRUMENTS, v.83, 2012, p.115-120.

Hong, Jeongmin; Bekyarova, Elena; Liang, Ping; de Heer, Walt A.; Haddon, Robert C.; Khizroev, Sakhrat "Room-temperature Magnetic Ordering in Functionalized Graphene" SCIENTIFIC REPORTS, v.2, 2012, p.115-120.

Orlita, M; Faugeras, C; Borysiuk, J; Baranowski, JM; Strupinski, W; Sprinkle, M; Berger, C; de Heer, WA; Basko, DM; Martinez, G; Potemski, M "Magneto-optics of bilayer inclusions in multilayered epitaxial graphene on the carbon face of SiC" PHYSICAL REVIEW B, v.83, 2011, p.. doi:10.1103/PhysRevB.83.12530  View record at Web of Science

Hicks, J.; Conrad, E. H. "Graphene investigated by synchrotron radiation" MRS BULLETIN, v.37, 2012, p.1203-1213.

Cockayne, E; Rutter, GM; Guisinger, NP; Crain, JN; First, PN; Stroscio, JA "Grain boundary loops in graphene" PHYSICAL REVIEW B, v.83, 2011, p.. doi:10.1103/PhysRevB.83.19542  View record at Web of Science

Winzer, Torben; Knorr, Andreas; Mittendorff, Martin; Winnerl, Stephan; Lien, Miao-Bin; Sun, Dong; Norris, Theodore B.; Helm, Manfred; Malic, Ermin "Absorption saturation in optically excited graphene" APPLIED PHYSICS LETTERS, v.101, 2012, p.115-120.

Kindermann, M; Mele, EJ "Landau quantization in twisted bilayer graphene: The Dirac comb" PHYSICAL REVIEW B, v.84, 2011, p.. doi:10.1103/PhysRevB.84.16140  View record at Web of Science

Siegel, DA; Park, CH; Hwang, C; Deslippe, J; Fedorov, AV; Louie, SG; Lanzara, A "Many-body interactions in quasi-freestanding graphene" PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.108, 2011, p.11365. doi:10.1073/pnas.110024210  View record at Web of Science

Orlita, M.; Tan, Liang Z.; Potemski, M.; Sprinkle, M.; Berger, C.; de Heer, W. A.; Louie, Steven G.; Martinez, G. "Resonant Excitation of Graphene K-Phonon and Intra-Landau-Level Excitons in Magneto-Optical Spectroscopy (vol 108, 247401, 2012)" PHYSICAL REVIEW LETTERS, v.108, 2012, p.115-120.

Wang, Z. F.; Liu, Feng; Chou, M. Y. "Fractal Landau-Level Spectra in Twisted Bilayer Graphene" NANO LETTERS, v.12, 2012, p.3833-3838.

Dlubak, Bruno; Martin, Marie-Blandine; Deranlot, Cyrile; Servet, Bernard; Xavier, Stephane; Mattana, Richard; Sprinkle, Mike; Berger, Claire; De Heer, Walt A.; Petroff, Frederic; Anane, Abdelmadjid; Seneor, Pierre; Fert, Albert "Highly efficient spin transport in epitaxial graphene on SiC" NATURE PHYSICS, v.8, 2012, p.557-561.

Winnerl, S; Orlita, M; Plochocka, P; Kossacki, P; Potemski, M; Winzer, T; Malic, E; Knorr, A; Sprinkle, M; Berger, C; de Heer, WA; Schneider, H; Helm, M "Carrier Relaxation in Epitaxial Graphene Photoexcited Near the Dirac Point" PHYSICAL REVIEW LETTERS, v.107, 2011, p.. doi:10.1103/PhysRevLett.107.23740  View record at Web of Science

Zheng, P.M.; Bryan, S.E.; Yang, Y.; Murali, R.; Naeemi, A.; Meindl, J.D. "Hydrogenation of Graphene Nanoribbon Edges: Improvement in Carrier Transport" IEEE, v.34, 2013, p.707-709.

Wu, X.; Hu, Y.; Ruan, M.; Madiomanana, N.; Hankinson, J.; Sprinkle, M.; Berger, C.; de Heer, W. "Half integer quantum Hall effect in high mobility single layer epitaxial graphene" Applied Physics Letters, v.95:22, 2009, p.223108.

Hsiang-Chih Chiu1; Beate Ritz; Suenne Kim; Erio Tosatti; Christian Klinke; Elisa Riedo "Sliding on a Nanotube: Interplay of Friction, Deformations and Structure" Advanced Materials, v., 2012, p.. doi:10.1002/adma.201104712 

Siegel, D.; Hwang, C.; Fedorov, A.; Lanzara, A. "Quasifreestanding multilayer graphene films on the carbon face of SiC" Physical Review B, v.81:24, 2010, p.241417.

Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Nevius, M. S.; Wang, F.; Shepperd, K.; Palmer, J.; Bertran, F.; Le Fevre, P.; Kunc, J.; de Heer, W. A.; Berger, C.; Conrad, E. H. "A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene" NATURE PHYSICS, v.9, 2013, p.49-54.

Miller, D.; Kubista, K.; Rutter, G.; Ruan, M.; de Heer, W.; Kindermann, M.; First, P.; Stroscio, J. "Real-space mapping of magnetically quantized graphene states" Nature Physics, v.6:10, 2010, p.811.

Wei, ZQ; Wang, DB; Kim, S; Kim, SY; Hu, YK; Yakes, MK; Laracuente, AR; Dai, ZT; Marder, SR; Berger, C; King, WP; de Heer, WA; Sheehan, PE; Riedo, E "Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics" SCIENCE, v.328, 2010, p.1373. doi:10.1126/science.118811  View record at Web of Science

Conrad, E.H. "Next Generation Semiconductors" CNRS International Magazine, v.29, 2013, p.14-15.

Sprinkle, M; Ruan, M; Hu, Y; Hankinson, J; Rubio-Roy, M; Zhang, B; Wu, X; Berger, C; de Heer, WA "Scalable templated growth of graphene nanoribbons on SiC" NATURE NANOTECHNOLOGY, v.5, 2010, p.727. doi:10.1038/nnano.2010.19  View record at Web of Science

Hicks, J; Sprinkle, M; Shepperd, K; Wang, F; Tejeda, A; Taleb-Ibrahimi, A; Bertran, F; Le Fevre, P; de Heer, WA; Berger, C; Conrad, EH "Symmetry breaking in commensurate graphene rotational stacking: Comparison of theory and experiment" PHYSICAL REVIEW B, v.83, 2011, p.. doi:10.1103/PhysRevB.83.20540  View record at Web of Science

Sun, D; Divin, C; Berger, C; de Heer, WA; First, PN; Norris, TB "Spectroscopic Measurement of Interlayer Screening in Multilayer Epitaxial Graphene" PHYSICAL REVIEW LETTERS, v.104, 2010, p.. doi:10.1103/PhysRevLett.104.13680  View record at Web of Science

Sierra-Martin, B; Frederick, JA; Laporte, Y; Markou, G; Lietor-Santos, JJ; Fernandez-Nieves, A "Determination of the bulk modulus of microgel particles" COLLOID AND POLYMER SCIENCE, v.289, 2011, p.721. doi:10.1007/s00396-010-2346-  View record at Web of Science

Yan, J.; Xian,L.; Chou,M. "Structural and Electronic Properties of Oxidized Graphene" Applied Physics Letters, v.95:22, 2009, p.223108.

Guo, Zelei; Dong, Rui; Chakraborty, Partha Sarathi; Lourenco, Nelson; Palmer, James; Hu, Yike; Ruan, Ming; Hankinson, John; Kunc, Jan; Cressler, John D.; Berger, Claire; de Heer, Walt A. "Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors" NANO LETTERS, v.13, 2013, p.942-947.

Sierra-Martin, B; Laporte, Y; South, AB; Lyon, LA; Fernandez-Nieves, A "Bulk modulus of poly(N-isopropylacrylamide) microgels through the swelling transition" PHYSICAL REVIEW E, v.84, 2011, p.. doi:10.1103/PhysRevE.84.01140  View record at Web of Science

Barraza-Lopez, Salvador; Kindermann, Markus; Chou, M. Y. "Charge Transport through Graphene Junctions with Wetting Metal Leads" NANO LETTERS, v.12, 2012, p.3424-3430.

Hicks, J; Shepperd, K; Wang, F; Conrad, EH "The structure of graphene grown on the SiC (000(1)over-bar) surface" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.. doi:10.1088/0022-3727/45/15/15400  View record at Web of Science

Ramesh, P.; Itkis, M.; Bekyarova, E.; Wang, F.; Niyogi, S.; Chi, X.; Berger, C.; de Heer, W.; Haddon, R. "Electro-oxidized Epitaxial Graphene Channel Field-Effect Transistors with Single-Walled Carbon Nanotube Thin Film Gate Electrode" Journal of the American Chemical Society, v.132:41, 2010, p.14429.

Niyogi, S; Bekyarova, E; Hong, J; Khizroev, S; Berger, C; de Heer, W; Haddon, RC "Covalent Chemistry for Graphene Electronics" JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.2, 2011, p.2487. doi:10.1021/jz200426  View record at Web of Science

van Zwol, P.J.; Thiel, S.; Berger, C.; de Heer, W.A.; Chevrier, J. "Observation of Enhanced Nanoscale Radiative Heat Flow due to Surface Plasmons in Graphene and Doped Silicon" Phys. Rev. Lett., v.109, 2012, p.64301-302.

Kodali, VK; Scrimgeour, J; Kim, S; Hankinson, JH; Carroll, KM; de Heer, WA; Berger, C; Curtis, JE "Nonperturbative Chemical Modification of Graphene for Protein Micropatterning" LANGMUIR, v.27, 2011, p.863. doi:10.1021/la103317  View record at Web of Science

Lietor-Santos, JJ; Sierra-Martin, B; Fernandez-Nieves, A "Bulk and shear moduli of compressed microgel suspensions" PHYSICAL REVIEW E, v.84, 2011, p.. doi:10.1103/PhysRevE.84.06040  View record at Web of Science

Yan, J.; Chou, M. "Oxidation Functional Groups on Graphene: Structural and Electronic Properties" Physical Review B, v.82, 2010, p.125403.

de Heer, W.; Berger, C.; Wu, X.; Sprinkle, M.; Hu, Y.; Ruan, M.; Stroscio, J.; First, P.; Haddon, R.; Piot, B.; Faugeras, C.; Potemski, M.; Moon, J. "Epitaxial graphene electronic structure and transport" Journal of Physics D-applied Physics, v.43:37, 2010, p.374007.

Zhang, ZS; Voss, PL "Full-band quantum-dynamical theory of saturation and four-wave mixing in graphene" OPTICS LETTERS, v.36, 2011, p.4569. View record at Web of Science

Sprinkle, M; Hicks, J; Tejeda, A; Taleb-Ibrahimi, A; Le Fevre, P; Bertran, F; Tinkey, H; Clark, MC; Soukiassian, P; Martinotti, D; Hass, J; Conrad, EH "Multilayer epitaxial graphene grown on the SiC (000(1)over-bar) surface; structure and electronic properties" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.43, 2010, p.. doi:10.1088/0022-3727/43/37/37400  View record at Web of Science

Mathieu, C; Barrett, N; Rault, J; Mi, YY; Zhang, B; de Heer, WA; Berger, C; Conrad, EH; Renault, O "Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000(1)over-bar)" PHYSICAL REVIEW B, v.83, 2011, p.. doi:10.1103/PhysRevB.83.23543  View record at Web of Science

Sherpa, Sonam D.; Levitin, Galit; Hess, Dennis W. "Effect of the polarity of carbon-fluorine bonds on the work function of plasma-fluorinated epitaxial graphene" APPLIED PHYSICS LETTERS, v.101, 2012, p.115-120.

Rutter, G.; Guisinger, N.; Crain, J.; First, P.; Stroscio, J. "Edge structure of epitaxial graphene islands" Physical Review B, v.81:24, 2010, p.245408.

Tung, LC; Cadden-Zimansky, P; Qi, J; Jiang, Z; Smirnov, D "Measurement of graphite tight-binding parameters using high-field magnetoreflectance" PHYSICAL REVIEW B, v.84, 2011, p.. doi:10.1103/PhysRevB.84.15340  View record at Web of Science

Hicks, J.; Shepperd, K.; Wang, F.; Conrad, E. H. "The structure of graphene grown on the SiC (000(1)over-bar) surface" JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, 2012, p.115-120.

Le graphène épitaxié sur la terminaison carbone du carbure de silicium: Les propriétés d'une couche unique de graphène sur un millefeuille "Tejeda, A.; Taleb-Ibrahimi, A.; Berger, C." Reflets da la Physique, v.31, 2012, p.56-58.

First, P.; de Heer, W.; Seyller, T.; Berger, C.; Stroscio, J.; Moon, J. "Epitaxial Graphenes on Silicon Carbide RID F-8410-2011" Mrs Bulletin, v.35:4, 2010, p.296.

Zhang, C; Amos, N; Fernandez, R; Hong, J; Hu, B; Khizroev, S "Magnetic Properties Optimization for Amorphous Soft Underlayers" JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.5, 2010, p.13. doi:10.1166/jno.2010.105  View record at Web of Science

Williams, MD; Samarakoon, DK; Hess, DW; Wang, XQ "Tunable bands in biased multilayer epitaxial graphene" NANOSCALE, v.4, 2012, p.2962. doi:10.1039/c2nr11991  View record at Web of Science

Ming, F; Zangwill, A "Model for the epitaxial growth of graphene on 6H-SiC(0001)" PHYSICAL REVIEW B, v.84, 2011, p.. doi:10.1103/PhysRevB.84.11545  View record at Web of Science

Wang, F; Shepperd, K; Hicks, J; Nevius, MS; Tinkey, H; Tejeda, A; Taleb-Ibrahimi, A; Bertran, F; Le Fevre, P; Torrance, DB; First, PN; de Heer, WA; Zakharov, AA; Conrad, EH "Silicon intercalation into the graphene-SiC interface" PHYSICAL REVIEW B, v.85, 2012, p.. doi:10.1103/PhysRevB.85.16544  View record at Web of Science

Sarkar, Santanu; Bekyarova, Elena; Haddon, Robert C. "Chemistry at the Dirac Point: Diels-Alder Reactivity of Graphene" ACCOUNTS OF CHEMICAL RESEARCH, v.45, 2012, p.673-682.

Wu, XS; Hu, Y; Ruan, M; Madiomanana, NK; Berger, C; de Heer, WA "Thermoelectric effect in high mobility single layer epitaxial graphene" APPLIED PHYSICS LETTERS, v.99, 2011, p.. doi:10.1063/1.364142  View record at Web of Science

Holden, DA; Hendrickson, GR; Lan, WJ; Lyon, LA; White, HS "Electrical signature of the deformation and dehydration of microgels during translocation through nanopores" SOFT MATTER, v.7, 2011, p.8035. doi:10.1039/c1sm05680  View record at Web of Science

Zhang, H; Bekyarova, E; Huang, JW; Zhao, Z; Bao, WZ; Wang, FL; Haddon, RC; Lau, CN "Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices" NANO LETTERS, v.11, 2011, p.4047. doi:10.1021/nl200803  View record at Web of Science

McLane, Louis T.; Chang, Patrick; Granqvist, Anna; Boehm, Heike; Kramer, Anthony; Scrimgeour, Jan; Curtis, Jennifer E. "Spatial Organization and Mechanical Properties of the Pericellular Matrix on Chondrocytes" BIOPHYSICAL JOURNAL, v.104, 2013, p.986-996.

Chiu, H. -C.; Kim, S.; Klinke, C.; Riedo, E. "Morphology dependence of radial elasticity in multiwalled boron nitride nanotubes" APPLIED PHYSICS LETTERS, v.101, 2012, p.115-120.

van Zwol, P. J.; Thiele, S.; Berger, C.; de Heer, W. A.; Chevrier, J. "Nanoscale Radiative Heat Flow due to Surface Plasmons in Graphene and Doped Silicon" PHYSICAL REVIEW LETTERS, v.109, 2012, p.115-120.

Sun, Dong; Divin, Charles; Mihnev, Momchil; Winzer, Torben; Malic, Ermin; Knorr, Andreas; Sipe, John E.; Berger, Claire; de Heer, Walt A.; First, Phillip N.; Norris, Theodore B. "Current relaxation due to hot carrier scattering in graphene" NEW JOURNAL OF PHYSICS, v.14, 2012, p.115-120.

Zhou S.; Kim K; Bongiorno A. "Chemical Structure of Oxidized Multilayer Epitaxial Graphene: A Density Functional Theory Study" J. Phys. Chem. C, v.Vol 117, 2013, p.6267-6274.

Sarkar, Santanu; Bekyarova, Elena; Haddon, Robert C. "Covalent chemistry in graphene electronics" MATERIALS TODAY, v.15, 2012, p.276-285.


Project Outcomes Report

Disclaimer

This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.

Microelectronic devices and integrated circuits (ICs) have established the ways in which we communicate, seek/use information, and plan/spend our personal time.  ICs are employed in large-scale computers, transportation vehicles, and consumer items such as microwave ovens, laptops, and phones.  Incorporation of these electronic devices into a myriad of tools and gadgets has been driven by miniaturization of electronics.  For more than 50 years, silicon has been the material of choice for the simultaneous fabrication of millions, currently billions, of devices such as transistors, resistors, capacitors, and diodes that are interconnected to yield circuits that enhance our lives.  These phenomenal advances have been made possible by continued miniaturization of device sizes that allows higher speeds, improved capabilities, enhanced reliability, and continued improvement in circuit performance to permit new applications.  Due to the inherent physical properties of silicon, current silicon-based electronics will soon reach its fundamental limits for size reduction.  In order to continue the advances in ICs achieved to date, it is critical that alternative materials, processes and devices be developed. The Georgia Tech (GT) Materials Research Science and Engineering Center (MRSEC) supplies the technical knowledge base, diverse workforce, leadership, and innovative materials processing expertise required to implement new electronic materials that enhance, complement and serve as the successor to silicon for future electronic devices and circuits. The GT MRSEC has developed a fundamental understanding of epitaxial graphene (EG) growth and properties, and has demonstrated how EG could be a foundational material for future electronic devices.  Graphene is a flat, single layer of carbon atoms tightly packed into a two-dimensional hexagonal (honeycomb) array; EG is graphene that has been grown on a silicon carbide (SiC) substrate to generate a unique high-purity and structurally high-quality graphene from which high-speed electronic devices can be manufactured.

EG has been grown by high temperature treatment of SiC to evaporate Si and leave behind a carbon surface layer.  By appropriate furnace design and process sequence investigation, EG layers with electron speeds more than one hundred times the electron speed in silicon have been demonstrated.  Much of the work subsequent to that discovery focused on the fundamental understanding of the physical, chemical, and electrical properties of EG and processing methods for the fabrication of transistors.  For instance, techniques to form small (< 50 nm width) ribbons of EG, control defects in EG, perfect the interface of EG with SiC, and alter EG electrical properties on SiC substrates, have been investigated, all of which are essential for the large scale manufacture of high speed, low power electronic devices.  A 10,000 EG transistor array was produced to demonstrate the feasibility of this novel approach to future device and circuit fabrication.  A total of 189 journal publications and more than 215 invited talks at conferences, universities, and corporations resulted from these studies.  A website (Graphene Times) was established as a news vehicle for publications/reports related to graphene science and technology; content was updated weekly from numerous data bases.

In addition to extensive development of the science and technology of EG, the GT MRSEC has integrated the science/technology developed with educational programs, student/postdoctoral/teacher training and mentoring, and industrial needs to ensure availability of the necessary workforce and technical transfer capabilities for electronic materials and processing, which enhances the U.S. economy.  These efforts also promote diversity of students and faculty involved in the developme...

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