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Research Spending & Results

Award Detail

Awardee:OREGON STATE UNIVERSITY
Doing Business As Name:Oregon State University
PD/PI:
  • Douglas A Keszler
  • (541) 737-6736
  • douglas.keszler@oregonstate.edu
Award Date:09/22/2008
Estimated Total Award Amount: $ 1,500,000
Funds Obligated to Date: $ 1,512,648
  • FY 2008=$1,150,000
  • FY 2010=$362,648
Start Date:10/01/2008
End Date:08/31/2012
Transaction Type:Grant
Agency:NSF
Awarding Agency Code:4900
Funding Agency Code:4900
CFDA Number:47.049
Primary Program Source:040100 NSF RESEARCH & RELATED ACTIVIT
Award Title or Description:CCI Phase I: Center for Green Materials Chemistry
Federal Award ID Number:0847970
DUNS ID:053599908
Parent DUNS ID:053599908
Program:CHE CENTERS
Program Officer:
  • Katharine Covert
  • (703) 292-4950
  • kcovert@nsf.gov

Awardee Location

Street:OREGON STATE UNIVERSITY
City:Corvallis
State:OR
ZIP:97331-8507
County:Corvallis
Country:US
Awardee Cong. District:04

Primary Place of Performance

Organization Name:Oregon State University
Street:OREGON STATE UNIVERSITY
City:Corvallis
State:OR
ZIP:97331-8507
County:Corvallis
Country:US
Cong. District:04

Abstract at Time of Award

The Center for Green Materials Chemistry will develop a fundamentally new chemistry-based platform for synthesizing environmentally benign, functional inorganic films. Three key research areas include (1) develop new nanocluster chemistries using abundant, environmentally benign metals;(2) use these chemistries to produce previously unrealized nanostructured laminates and composites; (3) apply these chemistries to the fabrication of vertical transport transistors. Aqueous-based processing of functional inorganic films can reduce the costs of electronics manufacturing and enable the use of large-area substrates while simultaneously reducing chemical hazards and waste. The Center has strong industry partnerships. The Center Education Plan will promote early entry and short time to degree, broadened perspectives, and collaborative mentorships. The Outreach Plan includes the production of captivating imagery and videos to illustrate technically demanding material and the human element of science. The Centers for Chemical Innovation (CCI) Program supports research centers that can address major, long-term fundamental chemical research challenges that have a high probability of both producing transformative research and leading to innovation. These Centers will attract broad scientific and public interest.

Publications Produced as a Result of this Research

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R. Ravichandran, B. Pelatt, J. F. Wager, D. A. Keszler "Atomic solid state energy scale" Journal of the American Chemical Society, v.133, 2011, p.16582.

Meyers, Stephen T.; Anderson, Jeremy T.; Hung, Celia M.; Thompson, John; Wager, John F.; Keszler, Douglas A. "Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs" Journal of the American Chemical Society, v.130, 2008, p.17603. doi:10.1021/ja808243k 

J. F. Wager, R. L. Hoffman "Thin, fast, flexible: amorphous oxide semiconductors promise to make flat-panel displays faster and sharper than today's silicon standby" IEEE Spectrum, v.May iss, 2011, p.51.

W. Wang, K. M. Wentz, S. E. Hayes, D. W. Johnson, D. A. Keszler "Synthesis of hydroxide cluster" Inorganic Chemistry, v.50, 2011, p.4683.

M. Alemayehu, J. E. Davis, M. Jackson, B. Lessig, L. Smith, J. D. Sumega, C. Knutson, M. Beekman, D. C. Johnson, D. A. Keszler "Tunable dielectric thin films by aqueous inorganic solution-based processing" Solid State Sciences, v., 2011, p.. doi:10.1016/j.solidstatesciences2011.09.007 

Cowell, E. William, III; Knutson, Christopher C.; Wager, John F. "Amorphous Metal/Oxide Nanolaminate" ACS Applied Materials and Interfaces, v.2, 2010, p.1811. doi:10.1021/am100283m 

Q. Lin, S. Tepfer, C. Heideman, C. Mortensen, N. Nguyen, P. Zschack, M. Beekman, D. C. Johnson "Influence of selenium vapor post-annealing on the electrical transport properties of PbSe-WSe2 nanolamiantes" Journal of Materials Research, v.26, 2011, p.1866.

Mensinger, ZL; Zakharov, LN; Johnson, DW "Synthesis and Crystallization of Infinite Indium and Gallium Acetate 1D Chain Structures and Concomitant Ethyl Acetate Hydrolysis" INORGANIC CHEMISTRY, v.48, 2009, p.3505. doi:10.1021/ic900094  View record at Web of Science

J. O. Thompson, M. D. Anderson, T. Ngai, T. Allen, D. C. Johnson "The nucleation and growth kinetics of co-deposited copper and selenium precursors to metastable copper selenides" Journal of Alloys and Compounds, v.509, 2011, p.9631.

Mensinger, ZL; Gatlin, JT; Meyers, ST; Zakharov, LN; Keszler, DA; Johnson, DW "Synthesis of Heterometallic Group 13 Nanoclusters and Inks for Oxide Thin-Film Transistors" ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.47, 2008, p.9484. doi:10.1002/anie.20080351  View record at Web of Science

J A Haack, J A Berglund, J E Hutchison, D W Johnson, M C Lonergan, D R Tyler "Chemistry of Sustainability" CONFCHEM, v., 2010, p.Paper 3.

Jiang, K; Zakutayev, A; Stowers, J; Anderson, MD; Tate, J; McIntyre, DH; Johnson, DC; Keszler, DA "Low-temperature, solution processing of TiO2 thin films and fabrication of multilayer dielectric optical elements" SOLID STATE SCIENCES, v.11, 2009, p.1692. doi:10.1016/j.solidstatesciences.2009.05.02  View record at Web of Science

Alan Telecky, Peng Xie, Jason Stowers, Andrew Grenville, Bruce Smith, Douglas A. Keszler "Photopatternable Inorganic Hardmask" Journal of Vacuum Science and Technology, v.28, 2010, p.C6S19.

Dirk N. Weiss, Stephen T. Meyers, Douglas A. Keszler "All inorganic thermal imprint process" Journal of Vacuum Science and Technology, v.28, 2010, p.823. doi:10.1116/1.3463454 

A. Mochel, I. Sergeev, N. Nguyen, G. J. Long, F. Grandjean, D. C. Johnson, R. P. Hermann "Lattice dynamics in the FeSb3 Skutterudite" Physical Review B, v.84, 2011, p.064302.

Lin, Qiyin; Smeller, Mary; Heideman, Colby L.; Zschack, Paul; Koyano, Mikio; Anderson, Michael D.; Kykyneshi, Robert; Keszler, Douglas A.; Anderson, Ian M.; Johnson, David C. "Rational Synthesis and Characterization of a New Family of Low Thermal Conductivity Misfit Layer Compounds [(PbSe)0.99]m(WSe2)n." Chemistry of Materials, v.22, 2010, p.1002.

D. A. Keszler "Transistors pick up steam" Nature Materials, v.10, 2010, p.9.

K. Jiang, J. T. Anderson, K. Hoshino, D. Li, J. F. Wager, D. A. Keszler "Low-energy path to dense HfO2 thin films with aqueous precursor" Chemistry of Materials, v.23, 2011, p.945.

E. W. Cowell III, N. Alimardani, C. C. Knutson, J. F. Conley Jr., D. A. Keszler, B. J. Gibbons, J. F. Wager "Advancing MIM Electronics: Amorphous Metal Electrodes" Advanced Materials, v.23, 2010, p.74.

Cowell, E. William; Knutson, Christopher C.; Kuhta, Nicholas A.; Stickle, William; Keszler, Douglas A.; Wager, John F. "Engineering anisotropic dielectric response through amorphous laminate structure" Physica Status Solidi A: Applications and Materials Science, v.209, 2012, p.777.


Project Outcomes Report

Disclaimer

This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.

Center for Green Materials Chemistry (CGMC)

Phase-I Center for Chemical Innovation

 

Basic chemistry insights have allowed us to transform the use of solution chemistry to synthesize designed inorganic solids.

We learned to prepare new inorganic clusters selectively and efficiently from environmentally benign water-based solutions.

We learned to transform aqueous solutions containing these metal clusters into smooth, dense films on the benchtop with an eye dropper and a spin coater with minimal energy input. We also demonstrated that the solutions could be used as precursors to directly pattern inorganic structures at dimensions smaller than 10 nm.  We also found that reliable tunneling diodes could for the first time be fabricated by using atomically smooth amorphous metal electrodes in combination with dense films.

We prepared nanolaminates by vapor deposition and aqueous solution deposition and learned to synthesize kinetically stable phases that do not exist in Nature and cannot be synthesized by any other means. We can synthesize an infinite number of distinct compounds and isomers by depositing precursors with different initial layering sequences. We have fabricated high-performance dielectrics from these laminates and demonstrated their use in thin-film transistors.  We have demonstrated anisotropic dielectric response through the fabrication and study of nanolaminate structures comprising amorphous metals and oxide films. 

The CGMC developed a nationally unique, comprehensive graduate education program, including a 15-week summer immersion program and internships with partner institutions. We achieved a diverse community of researchers by adopting a comprehensive approach to recruitment, effective mentorship, and community support. The CGMC benefited society by collaborating with industrial partners who have exploited our solution chemistry techniques to develop new and improved products. High-tech companies have welcomed the novel capabilities the CGMC can deliver, such as the ability to synthesize high-quality electronic materials from environmentally benign aqueous solutions, to scale precursor synthesis to large volumes efficiently, and to eliminate waste by recycling spent liquid. Our solution-deposited inorganic resists appear to be a key enabling technology for next-generation lithography techniques. A display manufacturer has applied CGMC chemistries to integrate solution-deposited layers into their thin-film transistor arrays.


Last Modified: 09/05/2012
Modified by: Douglas A Keszler

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